English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 750mOhm @ 3.1A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 310µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 390 pF @ 300 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.3A/30A TO263 |
|
STH10N80K5-2AGSTMicroelectronics |
MOSFET N-CH 800V 8A H2PAK-2 |
|
FQI6N40CTURochester Electronics |
MOSFET N-CH 400V 6A I2PAK |
|
TPCA8064-H,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 20A 8SOP |
|
CPH6445-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
RM6N800IPRectron USA |
MOSFET N-CHANNEL 800V 6A TO251 |
|
IAUC120N04S6L008ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A 8TDSON-33 |
|
IRF3709ZPBFRochester Electronics |
MOSFET N-CH 30V 87A TO220AB |
|
PMV25ENEARNexperia |
MOSFET N-CH 30V 5.5A TO236AB |
|
DKI06261Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 25A TO252 |
|
IRLR3103TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 55A DPAK |
|
STD19N3LLH6AGSTMicroelectronics |
MOSFET N-CH 30V 10A DPAK |
|
IRFP044NPBFRochester Electronics |
HEXFET POWER MOSFET |
