English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 40mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.7 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1.329 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-WDFN (2x2) |
| 包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK6D210-60EXNexperia |
MOSFET N-CH 60V 2.1A/5.7A 6DFN |
|
FDD4685-F085PRochester Electronics |
PMOS DPAK 40V 27 MOHM |
|
IPP50R299CPXKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
NTD32N06L-1GRochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
NTD50N03RGRochester Electronics |
MOSFET N-CH 25V 7.8A/45A DPAK |
|
2SK2008-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB33N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 33A D2PAK |
|
HUF76121D3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM5N650IPRectron USA |
MOSFET N-CHANNEL 650V 5A TO251 |
|
SI3134KE-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 750MA SOT523 |
|
TSM3401CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 3A SOT23 |
|
IPD90N08S405ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
CSD25481F4TTexas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
