类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.3mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9500 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 6.25W (Ta), 104W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFR140N30PWickmann / Littelfuse |
MOSFET N-CH 300V 70A ISOPLUS247 |
|
IXFQ60N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 60A TO3P |
|
IXFN32N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 27A SOT-227B |
|
FCD600N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 6A DPAK |
|
IXTA3N100P-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO263 |
|
SQM40P10-40L_GE3Vishay / Siliconix |
MOSFET P-CH 100V 40A TO263 |
|
BUK9Y104-100B,115Nexperia |
MOSFET N-CH 100V 14.8A LFPAK56 |
|
BSC020N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IRFU2405PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 56A IPAK |
|
BSS126IXTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
IRF233Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
C2M0160120DWolfspeed - a Cree company |
SICFET N-CH 1200V 19A TO247-3 |
|
VN2410L-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |