English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPW20N60CFDFKSA1Rochester Electronics |
COOL MOS POWER TRANSISTOR |
|
TPIC5621LDWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP80N04S2L-03Rochester Electronics |
MOSFET N-CH 40V 80A TO220-3 |
|
IAUT150N10S5N035ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 150A 8HSOF |
|
IXTK120N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 120A TO264 |
|
PMZ1200UPEYLNexperia |
MOSFET P-CH 30V 410MA DFN1006-3 |
|
AUIRLR024NRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
IPD80R4K5P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A TO252 |
|
R6002END3TL1ROHM Semiconductor |
MOSFET N-CH 600V 1.7A TO252 |
|
IXFP12N65X2MWickmann / Littelfuse |
MOSFET N-CH 650V 12A TO220 |
|
R6004KNXROHM Semiconductor |
MOSFET N-CH 600V 4A TO220FM |
|
IPP60R180C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A TO220-3 |
|
IRF6619TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 30A DIRECTFET |
