English
简体中文
MOSFET N-CH 650V 22A TO220
BASIC FORCE GAUGE, 0.12 LBF / 50
BREADBRD PREPUNCHED INSULAT NPTH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 145mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2190 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 37W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Isolated Tab |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMPH4015SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 14A/45A TO252-4L |
|
APT8024B2LLGMicrosemi |
MOSFET N-CH 800V 31A T-MAX |
|
SI1431DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 1.7A SC70-6 |
|
STL19N60DM2STMicroelectronics |
MOSFET N-CH 600V 11A PWRFLAT HV |
|
APL602B2GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A T-MAX |
|
FDMC86259PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3.2A/13A PWR33 |
|
IPB04N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
FDMS8660ASRochester Electronics |
MOSFET N-CH 30V 28A/49A 8PQFN |
|
RS3E095BNGZETBROHM Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
|
STP45N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
DMN4030LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 9.4A TO252-3 |
|
MCAC10H045Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 PACKAG |
|
DMT6017LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 65V 8.1A 6UDFN |