English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 530mOhm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 470 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 44W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS65R1K4C6Rochester Electronics |
MOSFET N-CH 650V 3.2A TO251-3 |
|
IPB80P03P405ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO263-3 |
|
RJK60S7DPK-M0#T0Rochester Electronics |
MOSFET N-CH 600V 30A TO3PSG |
|
DMN10H170SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 12A TO252-3 |
|
2SK3064G0LPanasonic |
MOSFET N-CH 30V 100MA SMINI3-F2 |
|
RSR020P05HZGTLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
NTMFS4C53NT1GRochester Electronics |
MOSFET N-CH 30V 38A 5DFN |
|
IRFSL7540PBFRochester Electronics |
MOSFET N-CH 60V 110A TO262 |
|
IPB45N06S409ATMA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NDH832PRochester Electronics |
MOSFET P-CH 20V 4.2A SUPERSOT8 |
|
IXTQ18N60PWickmann / Littelfuse |
MOSFET N-CH 600V 18A TO3P |
|
IRF530ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A TO220-3 |
|
SIHP22N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO220AB |
