English
简体中文
CRIMPING DIE SET LOC/WIRE STOP
MOSFET N-CH 100V 7.4A/45A TDSON
CONN HEADER VERT 50POS 2.54MM
CONN RCPT FMALE 19POS CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.4A (Ta), 45A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 20.5mOhm @ 45A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 43µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2900 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 76W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8-1 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD80R2K7C3AATMA1IR (Infineon Technologies) |
MOSFET N-CH TO252-3 |
|
RM5N150S8Rectron USA |
MOSFET N-CHANNEL 150V 4.6A 8SOP |
|
SI2302DDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 2.9A SOT23-3 |
|
SIHW70N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 70A TO247AD |
|
STD3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A DPAK |
|
IRF3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO220AB |
|
STI76NF75STMicroelectronics |
MOSFET N-CH 75V 80A I2PAK |
|
PMPB29XNE,115Rochester Electronics |
MOSFET N-CH 30V 5A DFN2020MD-6 |
|
FQP32N20CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
RSJ400N06TLROHM Semiconductor |
MOSFET N-CH 60V 40A LPTS |
|
SQS484ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 16A PPAK1212-8 |
|
BUK7Y98-80EXNexperia |
MOSFET N-CH 80V 12.3A LFPAK56 |
|
PSMN035-150PRochester Electronics |
N-CHANNEL POWER MOSFET |