English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 33mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.6 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 1.15 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP32N20CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
RSJ400N06TLROHM Semiconductor |
MOSFET N-CH 60V 40A LPTS |
|
SQS484ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 16A PPAK1212-8 |
|
BUK7Y98-80EXNexperia |
MOSFET N-CH 80V 12.3A LFPAK56 |
|
PSMN035-150PRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB180N08S402ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
|
FQD19N10LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 15.6A DPAK |
|
MTP5N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSZ025N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 22A/40A TSDSON |
|
FDMS8558SRochester Electronics |
38A, 25V, 0.0015OHM, N-CHANNEL, |
|
SCH1330-TL-WRochester Electronics |
MOSFET P-CH 20V 1.5A SOT563/SCH6 |
|
SPU01N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4482Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6A 8SOIC |
