English
简体中文
RES ARRAY 9 RES 390K OHM 10SIP
MEMS OSC XO 6.0000MHZ H/LV-CMOS
MOSFET P-CH 40V 50A TO252-3
XTAL OSC TCXO 24.0000MHZ SNWV
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS®-P2 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 10.6mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 85µA |
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 10 V |
| vgs (最大值): | +5V, -16V |
| 输入电容 (ciss) (max) @ vds: | 3900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 58W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3-313 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHJ6N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 5.6A PPAK SO-8 |
|
MTDF2N06HDR2Rochester Electronics |
MOSFET N-CH 60V 1.5A MICRO8 |
|
RQ1C065UNTRROHM Semiconductor |
MOSFET N-CH 20V 6.5A TSMT8 |
|
STP110N55F6STMicroelectronics |
MOSFET N-CH 55V 110A TO220 |
|
PMN55ENEHNexperia |
MOSFET N-CH 60V 4.5A 6TSOP |
|
FDP050AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/80A TO220-3 |
|
FDD26AN06A0Rochester Electronics |
MOSFET N-CH 60V 7A/36A TO252AA |
|
TPN6R003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 27A 8TSON-ADV |
|
DMN10H700S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 700MA SOT23 |
|
MTW8N50ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPI08N80C3XKSA1Rochester Electronics |
MOSFET N-CH 800V 8A TO262-3-1 |
|
RS1E240GNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
FDS8876Rochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |