类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 700 V |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSQ015N06HZGTRROHM Semiconductor |
MOSFET N-CH 60V 1.5A TSMT6 |
|
IRFH5015TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 10A/56A 8PQFN |
|
IPA90R800C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 6.9A TO220 |
|
CSD18510Q5BTTexas Instruments |
MOSFET N-CH 40V 300A 8VSON |
|
IRFR48ZPBFRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
RQ3E150MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSMT |
|
TK40S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A DPAK |
|
APT6029SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 21A D3PAK |
|
NVGS3130NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 4.2A 6TSOP |
|
IRFR9120NTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
BSC050N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 18A/85A TDSON |
|
XP232N03013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 300MA SOT323-3 |
|
SPW47N65C3FKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 4 |