English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 37A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.72 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 91W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RQ3E150MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSMT |
|
TK40S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A DPAK |
|
APT6029SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 21A D3PAK |
|
NVGS3130NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 4.2A 6TSOP |
|
IRFR9120NTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
BSC050N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 18A/85A TDSON |
|
XP232N03013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 300MA SOT323-3 |
|
SPW47N65C3FKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 4 |
|
IRF520SPBFVishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
|
FDP085N10A-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 96A TO220-3 |
|
IRFR7746TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A DPAK |
|
SIRA84BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 22A/70A PPAK SO8 |
|
AUIRFR8403IR (Infineon Technologies) |
MOSFET N-CH 40V 100A DPAK |
