类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 4mOhm @ 21A, 4.5V |
vgs(th) (最大值) @ id: | 1.1V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 72 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 3770 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 63W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-PAK (TO-252AA) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHD3N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
PMXB65ENEZNexperia |
MOSFET N-CH 30V 3.2A DFN1010D-3 |
|
UF3SC065007K4SUnitedSiC |
MOSFET N-CH 650V 120A TO247-4 |
|
BSD314SPEL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3K336R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A SOT23F |
|
BUK7D36-60EXNexperia |
MOSFET N-CH 60V 5.5A/14A 6DFN |
|
BSS119L6433Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC090N03MSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
SISC06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK |
|
RJK03M8DNS-00#J5Rochester Electronics |
MOSFET N-CH 30V 30A 8HWSON |
|
FQI11P06TURochester Electronics |
MOSFET P-CH 60V 11.4A I2PAK |
|
FQB55N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 55A D2PAK |
|
STU6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A IPAK |