类型 | 描述 |
---|---|
系列: | U-MOSVII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 95mOhm @ 2A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 1.7 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 126 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7D36-60EXNexperia |
MOSFET N-CH 60V 5.5A/14A 6DFN |
|
BSS119L6433Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC090N03MSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
SISC06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK |
|
RJK03M8DNS-00#J5Rochester Electronics |
MOSFET N-CH 30V 30A 8HWSON |
|
FQI11P06TURochester Electronics |
MOSFET P-CH 60V 11.4A I2PAK |
|
FQB55N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 55A D2PAK |
|
STU6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A IPAK |
|
IXTT24P20Wickmann / Littelfuse |
MOSFET P-CH 200V 24A TO268 |
|
AO7400Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 1.7A SC70-3 |
|
PMPB29XPE,115Nexperia |
MOSFET P-CH 20V 5A DFN2020MD-6 |
|
DMG2307L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.5A SOT-23 |
|
SSI4N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |