English
简体中文
MOSFET P-CH 30V 2.5A SOT-23
800MMW X 45 RU X 1070MMD N TYPE,
CABLE OPT 4X10 GBPS FULL-DUPLEX
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 90mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 371.3 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 760mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSI4N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR3709ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
RM5N800HDRectron USA |
MOSFET N-CHANNEL 800V 5A TO263-2 |
|
NP90N055VDG-E1-AYRochester Electronics |
MOSFET N-CH 55V 90A TO252 |
|
CSD16411Q3Texas Instruments |
MOSFET N-CH 25V 14A/56A 8VSON |
|
SQJ868EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
|
AUIRF9Z34NRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
IPD110N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO252-3 |
|
RQ3E080GNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
NTTFS4985NFTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FDMC2674Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 220V 1A/7A 8MLP |
|
IPN95R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A SOT223 |
|
IXTH12N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247 |