类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR224TRPBFVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
SPD30N03S2L20GBTMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
NVBLS0D7N04M8TXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 240A 8HPSOF |
|
BSO220N03MSGXUMA1Rochester Electronics |
MOSFET N-CH 30V 7A DSO-8 |
|
RJK5033DPP-M0#T2Renesas Electronics America |
MOSFET N-CH 500V 6A TO220FL |
|
BUK7E1R8-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
|
HUF76639S3SRochester Electronics |
MOSFET N-CH 100V 51A D2PAK |
|
SUP80090E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 128A TO220AB |
|
IPA60R230P6Rochester Electronics |
IPA60R230 - 600V COOLMOS N-CHANN |
|
FDMS0302SRochester Electronics |
MOSFET N-CH 30V 29A/49A 8PQFN |
|
SQ3456BEV-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 7.8A 6TSOP |
|
BUK9E4R4-80E,127Rochester Electronics |
MOSFET N-CH 80V 120A I2PAK |
|
VN10KN3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |