English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 53.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3810 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 61W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7460DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 11A PPAK SO-8 |
|
CSD16401Q5Texas Instruments |
MOSFET N-CH 25V 38A/100A 8VSON |
|
IRF3808STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 106A D2PAK |
|
DMTH10H4M5LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
AUIRFS3004-7TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
DMN3009SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
NTLJF4156NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 2.5A 6WDFN |
|
PSMN8R3-40YS,115Nexperia |
MOSFET N-CH 40V 70A LFPAK56 |
|
AUIRF3205ZSRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
PHP20N06T,127Nexperia |
MOSFET N-CH 55V 20.3A TO220AB |
|
SI2319DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
TSM038N03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 78A 8PDFN |
|
SSM6J412TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A UF6 |
