类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 20.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 75mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 483 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 62W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2319DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
TSM038N03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 78A 8PDFN |
|
SSM6J412TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A UF6 |
|
BUK7675-55A,118Nexperia |
MOSFET N-CH 55V 20.3A D2PAK |
|
IXFP26N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 26A TO220AB |
|
TSM250N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 5.8A SOT23 |
|
IXFN40N90PWickmann / Littelfuse |
MOSFET N-CH 900V 33A SOT227B |
|
FCH040N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-3 |
|
IPA028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 89A TO220-FP |
|
IRLR120PBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
RM1002Rectron USA |
MOSFET N-CHANNEL 100V 2A SOT23 |
|
PMV16XNRNexperia |
MOSFET N-CH 20V 6.8A TO236AB |
|
IRF8734TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A 8SO |