类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MOSFET N-CH 30V 13.1A/43A TO252 |
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MOSFET N-CH 600V 21A TO263 |
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FQP50N06LSanyo Semiconductor/ON Semiconductor |
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MOSFET N-CH 60V 75A D2PAK |
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AOD480Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 25A TO252 |
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IXFX160N30TWickmann / Littelfuse |
MOSFET N-CH 300V 160A PLUS247-3 |
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MOSFET N-CH 30V 16.2A/40.5A PPAK |
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SI9435DYRochester Electronics |
MOSFET P-CH 30V 5.3A 8SOIC |
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TK31N60X,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO247 |
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IRFL024NPBFRochester Electronics |
HEXFET POWER MOSFET |
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IPS60R3K4CEAKMA1IR (Infineon Technologies) |
CONSUMER |