English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GigaMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 19mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 335 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 28000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1390W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SISA88DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16.2A/40.5A PPAK |
|
SI9435DYRochester Electronics |
MOSFET P-CH 30V 5.3A 8SOIC |
|
TK31N60X,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO247 |
|
IRFL024NPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPS60R3K4CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
IRF7799L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 375A DIRECTFET |
|
IPW65R110CFDAFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
SSM3J375F,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -20V -2A SOT346 |
|
NTD4860N-1GRochester Electronics |
MOSFET N-CH 25V 10.4A/65A IPAK |
|
SSM3J371R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A SOT23F |
|
IRF60DM206IR (Infineon Technologies) |
MOSFET N-CH 60V 130A DIRECTFET |
|
SI9934DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7Y53-100B,115Nexperia |
MOSFET N-CH 100V 24.8A LFPAK56 |
