







MOSFET N-CH 650V 15A TO262
OPTOISO 5KV TRANS W/BASE 6SMD
GLC, BASIC, HAND SAFE
FEED-THROUGH TERMINAL FOR DIRECT
| 类型 | 描述 |
|---|---|
| 系列: | aMOS™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.2 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 841 pF @ 100 V |
| 场效应管特征: | - |
| 功耗(最大值): | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SQ2315ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 12V 5A SOT23-3 |
|
|
NVTFS4C05NTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
|
STB18NM80STMicroelectronics |
MOSFET N-CH 800V 17A D2PAK |
|
|
IXFK98N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 98A TO264AA |
|
|
BSZ097N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 12A/40A 8TSDSON |
|
|
SI4423DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 10A 8SO |
|
|
UPA652TT-E1-ARochester Electronics |
MOSFET P-CH 20V 2A 6WSOF |
|
|
IPW60R165CPRochester Electronics |
21A, 600V, 0.165OHM, N-CHANNEL M |
|
|
BSS84,215Nexperia |
MOSFET P-CH 50V 130MA TO236AB |
|
|
FDS8813NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.5A 8SOIC |
|
|
SIHG44N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 46A TO247AC |
|
|
IXFH10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO247AD |
|
|
TK5A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 5A TO220SIS |