English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 67A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.9mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 2.55V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.22 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUZ32H3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFH12N90PWickmann / Littelfuse |
MOSFET N-CH 900V 12A TO247AD |
|
APT1003RSFLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 1KV 4A D3PAK |
|
IRF8721PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |
|
DMTH4008LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI5060 |
|
BUK7Y72-80EXNexperia |
MOSFET N-CH 80V 16A LFPAK56 |
|
HUF75339G3Rochester Electronics |
MOSFET N-CH 55V 75A TO247-3 |
|
NTD3055-150T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
FDD6780ARochester Electronics |
16.4A, 25V, 0.0086OHM, N-CHANNEL |
|
STW28N60M2STMicroelectronics |
MOSFET N-CH 600V 24A TO247 |
|
BSC010NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 39A/100A TDSON |
|
STB30NF20LSTMicroelectronics |
MOSFET N CH 200V 30A D2PAK |
|
PMV28ENEARNexperia |
MOSFET N-CH 30V 4.4A TO236AB |
