English
简体中文
CRYSTAL 12.0000MHZ 12PF SMD
MOSFET N-CH 60V 9A DPAK
IC RTC CLK/CALENDAR I2C 8-USOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 150mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 280 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta), 28.8W (Tj) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD6780ARochester Electronics |
16.4A, 25V, 0.0086OHM, N-CHANNEL |
|
STW28N60M2STMicroelectronics |
MOSFET N-CH 600V 24A TO247 |
|
BSC010NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 39A/100A TDSON |
|
STB30NF20LSTMicroelectronics |
MOSFET N CH 200V 30A D2PAK |
|
PMV28ENEARNexperia |
MOSFET N-CH 30V 4.4A TO236AB |
|
TSM2N60ECP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 2A TO252 |
|
IPU60R1K5CEAKMA2IR (Infineon Technologies) |
MOSFET N-CH 600V 3.1A TO251-3 |
|
NTMFS4C08NT1G-001Rochester Electronics |
MOSFET N-CH 30V 9A/52A 5DFN |
|
R6004ENDTLROHM Semiconductor |
MOSFET N-CH 600V 4A CPT3 |
|
IRFZ14STRLPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
NTE2392NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 40A TO3 |
|
IRFS3006TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A D2PAK |
|
FDZ375PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |