English
简体中文
CAP ALUM 330UF 20% 35V RADIAL
MOSFET N-CH 60V 10A D2PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 43W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE2392NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 40A TO3 |
|
IRFS3006TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A D2PAK |
|
FDZ375PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |
|
NTDV20N06T4GRochester Electronics |
MOSFET N-CH 60V 20A DPAK |
|
STW56N60M2STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
IRFR9024TRLPBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
IRFBC40PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IXTR102N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 54A ISOPLUS247 |
|
SQ2364EES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 2A SOT23-3 |
|
IMZ120R030M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 56A TO247-4 |
|
DMTH3004LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 21A/75A TO252 |
|
SQJ886EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STN1NK60ZSTMicroelectronics |
MOSFET N-CH 600V 300MA SOT223 |