类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 98mOhm @ 2.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 5.4 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 460 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 700mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT3 |
包/箱: | SC-96 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD20N03L27-1GRochester Electronics |
MOSFET N-CH 30V 20A IPAK |
|
MCH3383-TL-HRochester Electronics |
MOSFET P-CH 12V 3.5A SC70 |
|
APT5014SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 35A D3PAK |
|
RM12N650TIRectron USA |
MOSFET N-CH 650V 11.5A TO220F |
|
TK5A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 5A TO220SIS |
|
BUK7Y38-100EXNexperia |
MOSFET N-CH 100V 30A LFPAK56 |
|
FDBL0260N100Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 200A 8HPSOF |
|
IPP12CN10LGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
FCH25N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 25A TO247-3 |
|
IRFF322Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMG2305UXQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23 |
|
DMP2022LSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 9.3A 8SO |
|
TK8Q65W,S1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 7.8A IPAK |