English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 13mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60.2 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2575 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | -55°C ~ 155°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK8Q65W,S1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 7.8A IPAK |
|
IPB80N04S303ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3 |
|
IPW60R105CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO247-3 |
|
SSS6N70ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF2807STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 82A D2PAK |
|
RTQ035N03HZGTRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6 |
|
SISS42DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.8/40.5A PPAK |
|
IPP65R420CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 8.7A TO220-3 |
|
R6024ENXROHM Semiconductor |
MOSFET N-CH 600V 24A TO220FM |
|
FQP85N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 85A TO220-3 |
|
IPD60R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO252-3 |
|
HP4936DYTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH2R104PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A 8SOP |
