English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CFD2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 420mOhm @ 3.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 300µA |
| 栅极电荷 (qg) (max) @ vgs: | 31.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6024ENXROHM Semiconductor |
MOSFET N-CH 600V 24A TO220FM |
|
FQP85N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 85A TO220-3 |
|
IPD60R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO252-3 |
|
HP4936DYTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH2R104PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A 8SOP |
|
DIT120N08Diotec Semiconductor |
MOSFET N-CH 80V 120A TO220AB |
|
STW9N80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 7A TO247 |
|
AOI4126Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.5A/43A TO251A |
|
NX7002BKMB315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NDS355ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.7A SUPERSOT3 |
|
NTD4865N-35GRochester Electronics |
MOSFET N-CH 25V 8.5A/44A IPAK |
|
IRFBF20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
SIHB12N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO263 |
