类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 900 V |
电流 - 连续漏极 (id) @ 25°c: | 1.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 8Ohm @ 1A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 490 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 54W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB12N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO263 |
|
SI3129DV-T1-GE3Vishay / Siliconix |
P-CHANNEL 80 V (D-S) MOSFET TSOP |
|
DMN2055U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.8A SOT23 T&R 3 |
|
IPB60R120P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 26A D2PAK |
|
RU1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA UMT3F |
|
IRLH6224TRPBFRochester Electronics |
MOSFET N-CH 20V 28A/105A 8PQFN |
|
IRFR5505PBFRochester Electronics |
POWER MOSFET |
|
SPD03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD40DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 4.3A TO252-3 |
|
HUF75925P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 133A ISOPLUS247 |
|
FQPF13N50Rochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
SI2308BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |