English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 120mOhm @ 8.2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 410µA |
| 栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1544 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 95W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RU1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA UMT3F |
|
IRLH6224TRPBFRochester Electronics |
MOSFET N-CH 20V 28A/105A 8PQFN |
|
IRFR5505PBFRochester Electronics |
POWER MOSFET |
|
SPD03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD40DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 4.3A TO252-3 |
|
HUF75925P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 133A ISOPLUS247 |
|
FQPF13N50Rochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
SI2308BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TP2510N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 100V 480MA TO243AA |
|
BSZ100N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/20A 8TSDSON |
|
SIR632DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 150V 29A PPAK SO-8 |
|
RJK03B9DPA-00#J5ARochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
