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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM900N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 15A TO252 |
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FQU5N40TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 3.4A IPAK |
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TPCA8128,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 34A 8SOP |
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DMN2990UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 780MA 3DFN |
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IRLS4030TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
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NTD4813NH-35GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
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AON6284AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 80V 48A 8DFN |
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IRF7469TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 9A 8SO |
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CSD17585F5Texas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |
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NTMFS6H801NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 23A/157A 5DFN |
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RJK0393DPA-00#J5ARenesas Electronics America |
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APT6013B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 43A T-MAX |
|
SI4459ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 29A 8SO |
