English
简体中文
MOSFET N-CH 100V 130A TO263
RF TRANS NPN 15V 5GHZ 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9.1mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 104 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5080 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA50R950CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 500V 3.7A TO220 |
|
APT14M100SRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A D3PAK |
|
IXFT18N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 18A TO268 |
|
AOTS21115CAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 6.6A 6TSOP |
|
IRF2804LPBFRochester Electronics |
MOSFET N-CH 40V 75A TO262 |
|
IRFI9610GPBFVishay / Siliconix |
MOSFET P-CH 200V 2A TO220-3 |
|
CSD17484F4Texas Instruments |
MOSFET N-CH 30V 3A 3PICOSTAR |
|
IRFU130ATURochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTHS5404T1Rochester Electronics |
MOSFET N-CH 20V 5.2A CHIPFET |
|
DMP6180SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 60V 14A TO252 |
|
IPD60R600P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO252-3 |
|
IXTY2N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 2A TO252 |
|
RSC002P03T316ROHM Semiconductor |
MOSFET P-CH 30V 250MA SST3 |