English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 146 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4230 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 48W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM3J378R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
IPB042N03LGATMA1Rochester Electronics |
MOSFET N-CH 30V 70A TO263-3-2 |
|
FDB8832Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 34A/80A TO263AB |
|
RJK0366DPA-00#J0Rochester Electronics |
MOSFET N-CH 30V 25A 8WPAK |
|
SIJA58DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IRF620BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220FP |
|
IPB80N03S4L02ATMA1Rochester Electronics |
MOSFET N-CH 30V 80A TO263-3-2 |
|
NP109N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
TK560P60Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 600V 7A DPAK |
|
SI2316DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
RJK0702DPP-E0#T2Rochester Electronics |
MOSFET N-CH 75V 90A TO220FP |
|
CSD17483F4TTexas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
