类型 | 描述 |
---|---|
系列: | MDmesh™ K5 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 340mOhm @ 7A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 26 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 866 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 170W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SMP3003-TL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 75V 100A D2PAK |
![]() |
RM17N800T2Rectron USA |
MOSFET N-CH 800V 17A TO220-3 |
![]() |
IPW60R330P6FKSA1Rochester Electronics |
MOSFET N-CH 600V 12A TO247-3 |
![]() |
IPP042N03LGHKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 70A TO220-3 |
![]() |
AOTF286LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 13.5A/56A TO220 |
![]() |
SPB04N60C3E3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
PSMN1R2-25YL,115Nexperia |
MOSFET N-CH 25V 100A LFPAK56 |
![]() |
AOD7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO252 |
![]() |
SPA07N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDD16AN08A0_NF054Rochester Electronics |
MOSFET N-CH 75V 9A/50A DPAK |
![]() |
IPW60R080P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37A TO247-3 |
![]() |
DMN2004WK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 540MA SOT323 |
![]() |
2N7002KD1Rectron USA |
MOSFET N-CH 60V 350MA DFN1006-3 |