English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS6H880NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.3A/21A 8WDFN |
|
SIHP21N60EF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
NTD4804NA-1GRochester Electronics |
NTD4804NA-1G |
|
FDD20AN06A0Rochester Electronics |
MOSFET N-CH 60V 8A/45A TO252AA |
|
SPW11N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP8NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 6.5A TO220AB |
|
BUK6E2R0-30C127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDN5618PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.25A SUPERSOT3 |
|
FQI3N80TURochester Electronics |
MOSFET N-CH 800V 3A I2PAK |
|
IRF9321TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 15A 8SO |
|
IPB80N03S4L03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSO301SPRochester Electronics |
P-CHANNEL POWER MOSFET |
|
STN4NF03LSTMicroelectronics |
MOSFET N-CH 30V 6.5A SOT223 |
