RELAY TELECOM DPDT 2A 4.5VDC
P-CHANNEL POWER MOSFET
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STN4NF03LSTMicroelectronics |
MOSFET N-CH 30V 6.5A SOT223 |
|
IPL60R104C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A 4VSON |
|
TT8U1TRROHM Semiconductor |
MOSFET P-CH 20V 2.4A 8TSST |
|
BUK958R5-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
STD7LN80K5STMicroelectronics |
MOSFET N-CH 800V 5A DPAK |
|
SI2303CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 1.9A/2.7A SOT23 |
|
APT106N60LC6Roving Networks / Microchip Technology |
MOSFET N-CH 600V 106A TO264 |
|
IPB50N10S3L16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 50A TO263-3 |
|
IPI024N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
|
IRFR214PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
IPP80N03S4L03AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
EPC2033EPC |
GANFET N-CH 150V 31A DIE |
|
NTMFS4983NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/106A 5DFN |