English
简体中文
CAP 82 UF 20% 63 V
MOSFET P-CH 20V 2.4A 8TSST
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 105mOhm @ 2.4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 6.7 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 850 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 1.25W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-TSST |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK958R5-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
STD7LN80K5STMicroelectronics |
MOSFET N-CH 800V 5A DPAK |
|
SI2303CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 1.9A/2.7A SOT23 |
|
APT106N60LC6Roving Networks / Microchip Technology |
MOSFET N-CH 600V 106A TO264 |
|
IPB50N10S3L16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 50A TO263-3 |
|
IPI024N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
|
IRFR214PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
IPP80N03S4L03AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
EPC2033EPC |
GANFET N-CH 150V 31A DIE |
|
NTMFS4983NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/106A 5DFN |
|
IXTH260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO247 |
|
2SK2628LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
SQV120N06-4M7L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO262-3 |