English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 2Ohm @ 1.3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 140 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP80N03S4L03AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
EPC2033EPC |
GANFET N-CH 150V 31A DIE |
|
NTMFS4983NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/106A 5DFN |
|
IXTH260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO247 |
|
2SK2628LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
SQV120N06-4M7L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO262-3 |
|
IPW65R190C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
ECH8320-TL-HRochester Electronics |
MOSFET P-CH 20V 9.5A SOT28FL |
|
NTD24N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
|
IPD75N04S406ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO252-3 |
|
SI1401EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 12V 4A/4A SC70-6 |
|
IRF8707PBFRochester Electronics |
MOSFET N-CH 30V 11A 8SO |
|
FCP130N60Rochester Electronics |
MOSFET N-CH 600V 28A TO220-3 |
