类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 7.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 200mOhm @ 4.6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-PAK (TO-252AA) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ651Rochester Electronics |
MOSFET P-CH 60V 20A TO220ML |
|
IXTP42N25PWickmann / Littelfuse |
MOSFET N-CH 250V 42A TO220AB |
|
NTMFS4108NT1GRochester Electronics |
MOSFET N-CH 30V 13.5A 5DFN |
|
PMXB360ENEAZNexperia |
MOSFET N-CH 80V 1.1A DFN1010D-3 |
|
SI7460DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 11A PPAK SO-8 |
|
STFI24N60M2STMicroelectronics |
MOSFET N CH 600V 18A TO281 |
|
FDR840PRochester Electronics |
MOSFET P-CH 20V 10A SUPERSOT8 |
|
CMUDM8004 TR PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT523 |
|
IXTA130N15X4-7Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO263-7 |
|
TK9A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 9A TO220SIS |
|
AOD468Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 300V 11.5A TO252 |
|
IRFBF30Vishay / Siliconix |
MOSFET N-CH 900V 3.6A TO220AB |
|
SK8603170LPanasonic |
MOSFET N-CH 30V 20A/59A 8HSO |