English
简体中文
RES 634 OHM 0.05% 1/8W 0805
MOSFET N-CH 55V 75A TO220AB
IC SRAM 2MBIT PARALLEL 256CABGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 5.3mOhm @ 101A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5480 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 330W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPB16N50C3ATMA1Rochester Electronics |
MOSFET N-CH 560V 16A TO263-3 |
|
BUK6510-75C,127Rochester Electronics |
MOSFET N-CH 75V 77A TO220AB |
|
IRL510PBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
IPB47N10SL26ATMA1Rochester Electronics |
MOSFET N-CH 100V 47A TO263-3 |
|
APT30M36B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 84A T-MAX |
|
PMV65ENEARNexperia |
MOSFET N-CH 40V 2.7A TO236AB |
|
IPP114N03LGHKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NIMD6302R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF8010PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220AB |
|
DMN55D0UTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 160MA SOT-523 |
|
IPP80N06S207AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
FDZ661PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.6A 4WLCSP |
|
IXTT10N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO268 |