MOSFET P-CH 55V 42A D2PAK
BOARD EVAL FOR MLX80105 OTP
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 20mOhm @ 42A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD50R399CPBTMA1Rochester Electronics |
MOSFET N-CH 500V 9A TO252-3 |
|
BUK751R6-30E,127Rochester Electronics |
MOSFET N-CH 30V 120A TO220AB |
|
MCH6437-P-TL-ERochester Electronics |
MOSFET N-CH 20V 7A MCPH6 |
|
STP150N10F7STMicroelectronics |
MOSFET N-CH 100V 110A TO220 |
|
R6015FNJTLROHM Semiconductor |
MOSFET N-CH 600V 15A LPT |
|
IPL65R340CFDAUMA1Rochester Electronics |
MOSFET N-CH 650V 10.9A VSON-4-1 |
|
TPH2R306NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A 8SOP |
|
STW75N60M6-4STMicroelectronics |
MOSFET N-CH 600V 72A TO247-4 |
|
ISL9N315AD3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP15P10PHXKSA1Rochester Electronics |
MOSFET P-CH 100V 15A TO220-3-1 |
|
SI4403CDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 13.4A 8SO |
|
DMP3036SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.7A PWRDI3333-8 |
|
IRF7458TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |