CAP TRIMMER 1-16PF 250V TH
SICFET N-CH 1200V 65A TO247-3
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Cascode SiCJFET) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 65A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 12V |
rds on (max) @ id, vgs: | 45mOhm @ 40A, 12V |
vgs(th) (最大值) @ id: | 6V @ 10mA |
栅极电荷 (qg) (max) @ vgs: | 51 nC @ 15 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1500 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 429W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPN3R704PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
IXTK550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A TO264 |
|
SI1032X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 200MA SC89-3 |
|
FQP9N15Rochester Electronics |
MOSFET N-CH 150V 9A TO220-3 |
|
IPAN50R500CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.1A TO220 |
|
PSMN7R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 100A I2PAK |
|
IPW50R250CPFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IPP029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO220-3 |
|
NTMFS4854NST3GRochester Electronics |
MOSFET N-CH 25V 15.2A/149A SO8FL |
|
APT1204R7BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 3.5A TO247 |
|
3N163 DIELinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
|
FDB38N30USanyo Semiconductor/ON Semiconductor |
MOSFET N CH 300V 38A D2PAK |