English
简体中文
RES 280 OHM 0.5% 1/2W 1210
MOSFET N-CH 650V 10A ITO220S
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 900mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1650 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ITO-220S |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP126,115Nexperia |
MOSFET N-CH 250V 375MA SOT223 |
|
DMN1019USN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 9.3A SC59 |
|
SI8817DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
IRF7779L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 375A DIRECTFET |
|
TSM033NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 21A/121A 8PDFN |
|
US5U29TRROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
|
NVMFS5C466NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/52A 5DFN |
|
IPD50N06S2L13ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 50A TO252-31 |
|
DMN3026LVTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.6A TSOT26 |
|
SI3499DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 5.3A 6TSOP |
|
IPB027N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
2SK4088LS-1ERochester Electronics |
MOSFET N-CH 650V 7.5A TO220F-3FS |
|
RQ6E040XNTCRROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT6 |