类型 | 描述 |
---|---|
系列: | SuperMESH™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 5.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.8Ohm @ 2.6A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1138 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 125W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM3J328R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
STWA40N90K5STMicroelectronics |
MOSFET N-CH 900V 40A TO247 |
|
IXFH12N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 12A TO247AD |
|
RFD14N05SM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
|
IPB65R380C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO263 |
|
FDV045P20LSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.15A SOT23-3 |
|
IAUC80N04S6L032ATMA1IR (Infineon Technologies) |
IAUC80N04S6L032ATMA1 |
|
IPW60R120P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC2512SDCRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
SQM60030E_GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A D2PAK |
|
BSS138-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23 |
|
FDG410NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.2A SC88 |