RES SMD 154K OHM 1% 1/4W 1206
MOSFET N-CH 25V 170A 2WDSON
类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 170A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.2mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 82 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5852 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 2.8W (Ta), 57W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | MG-WDSON-2, CanPAK M™ |
包/箱: | 3-WDSON |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP6N60M2STMicroelectronics |
MOSFET N-CH 600V 4.5A TO220 |
|
IRFR48ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
PSMN011-60MLXNexperia |
MOSFET N-CH 60V 61A LFPAK33 |
|
IPB60R299CPATMA1Rochester Electronics |
MOSFET N-CH 600V 11A TO263-3 |
|
APT30M30JLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 88A ISOTOP |
|
AUIRFR5410-IRRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
C3M0065090J-TRWolfspeed - a Cree company |
SICFET N-CH 900V 35A D2PAK-7 |
|
NTB75N03RT4GRochester Electronics |
MOSFET N-CH 25V 9.7A/75A D2PAK |
|
SUM40014M-GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A TO263-7 |
|
MTB16N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCH041N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 77A TO247-3 |
|
AOTF3N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 2.4A TO220-3F |
|
SI4864DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 17A 8SO |