类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 35A |
驱动电压(最大 rds on,最小 rds on): | 20V |
rds on (max) @ id, vgs: | 100mOhm @ 15A, 20V |
vgs(th) (最大值) @ id: | 2.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 64 nC @ 20 V |
vgs (最大值): | +23V, -10V |
输入电容 (ciss) (max) @ vds: | 838 pF @ 1000 V |
场效应管特征: | - |
功耗(最大值): | 182W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D3PAK |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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