类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4.8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 38mOhm @ 3.6A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.3 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 400 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCP36N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 36A TO220-3 |
|
UF3C065080K3SUnitedSiC |
MOSFET N-CH 650V 31A TO247-3 |
|
FDD6682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R095C7Rochester Electronics |
MOSFET N-CH 650V 24A TO247 |
|
GKI03061Sanken Electric Co., Ltd. |
MOSFET N-CH 30V 14A 8DFN |
|
IPD50R2K0CERochester Electronics |
IPD50R2K0 - 500V COOLMOS N-CHANN |
|
IPP057N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
CMPDM7003 TR PBFREECentral Semiconductor |
MOSFET N-CH 50V 280MA SOT23 |
|
IPAN60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220 |
|
SIHD6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A DPAK |
|
FDI038AN06A0Rochester Electronics |
MOSFET N-CH 60V 17A/80A I2PAK |
|
FQPF9N50YDTURochester Electronics |
MOSFET N-CH 500V 5.3A TO220F-3 |
|
IRFSL3107PBFRochester Electronics |
MOSFET N-CH 75V 195A TO262 |