English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP057N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
CMPDM7003 TR PBFREECentral Semiconductor |
MOSFET N-CH 50V 280MA SOT23 |
|
IPAN60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220 |
|
SIHD6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A DPAK |
|
FDI038AN06A0Rochester Electronics |
MOSFET N-CH 60V 17A/80A I2PAK |
|
FQPF9N50YDTURochester Electronics |
MOSFET N-CH 500V 5.3A TO220F-3 |
|
IRFSL3107PBFRochester Electronics |
MOSFET N-CH 75V 195A TO262 |
|
DMN6017SFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 35A POWERDI3333 |
|
SPP02N80C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN1R1-25YLC,115Nexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
IXTH3N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO247 |
|
DMT68M8LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 54.1A PWRDI3333 |
|
IRFB3006GPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
