English
简体中文
CRYSTAL 48.0000MHZ 8PF SMD
MOSFET N-CH 1000V 3A TO247
IC TRANSCEIVER FULL 4/5 28SSOP
FUSE BLOCK IEC 700V 100A 1POLE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarVHV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.8Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT68M8LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 54.1A PWRDI3333 |
|
IRFB3006GPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
FCD900N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO252 |
|
ZXMN10A11KZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.4A TO252-3 |
|
IRFS7537PBFRochester Electronics |
HEXFET POWER MOSFET |
|
TK170V65Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 18A 5DFN |
|
TN2640LG-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 260MA 8SOIC |
|
DMP6110SSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET PCH 60V 8SO |
|
IPD60R400CEATMA1Rochester Electronics |
600V COOLMOS N-CHANNEL |
|
SIRA20DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 81.7A/100A PPAK |
|
RDD050N20TLROHM Semiconductor |
MOSFET N-CH 200V 5A CPT3 |
|
IRLR014TRLVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IPI04N03LARochester Electronics |
MOSFET N-CH 25V 80A TO262-3 |