类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 700 V |
电流 - 连续漏极 (id) @ 25°c: | 12.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 360mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 150µA |
栅极电荷 (qg) (max) @ vgs: | 16.4 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 517 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 26.4W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFD310PBFVishay / Siliconix |
MOSFET N-CH 400V 350MA 4DIP |
|
HUFA76445P3Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
|
AON2290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 4.5A DFN 2X2B |
|
DMT10H009LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
IRF141Rochester Electronics |
28A, 80V, 0.077OHM, N-CHANNEL PO |
|
IPI041N12N3GRochester Electronics |
IPI041N12 - 12V-300V N-CHANNEL P |
|
STP410N4F7AGSTMicroelectronics |
MOSFET N-CHANNEL 40V 180A TO220 |
|
IRLR7833TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
|
IRFS7540PBFRochester Electronics |
MOSFET N-CH 60V 110A D2PAK |
|
BUK9222-55A,118Nexperia |
MOSFET N-CH 55V 48A DPAK |
|
APT12M80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
SI3442BDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
ZVN2106AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 450MA TO92-3 |