English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET®, StrongIRFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 5.1mOhm @ 65A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.555 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9222-55A,118Nexperia |
MOSFET N-CH 55V 48A DPAK |
|
APT12M80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
SI3442BDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
ZVN2106AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 450MA TO92-3 |
|
IXFK150N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 150A TO264AA |
|
SCT3120ALGC11ROHM Semiconductor |
SICFET N-CH 650V 21A TO247N |
|
FDA16N50-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 16.5A TO3PN |
|
IRFIZ34GPBFVishay / Siliconix |
MOSFET N-CH 60V 20A TO220-3 |
|
FQB12P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11.5A D2PAK |
|
FDD6672ARochester Electronics |
MOSFET N-CH 30V 65A TO252 |
|
STW20NM60STMicroelectronics |
MOSFET N-CH 600V 20A TO247-3 |
|
IXFN210N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 210A SOT227B |
|
SQJA02EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
