MOSFET N-CH 600V 20A TO247-3
ERL-20-500 243 1% T-1 EK E3
IC TELECOM INTERFACE 48SSOP
类型 | 描述 |
---|---|
系列: | MDmesh™ II |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 165mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1800 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 140W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UF3C065030K3SUnitedSiC |
SICFET N-CH 650V 85A TO247-3 |
|
BSC0996NSATMA1Rochester Electronics |
MOSFET N-CH 34V 13A TDSON-8-5 |
|
R6004PND3FRATLROHM Semiconductor |
MOSFET N-CH 600V 4A TO252 |
|
LSIC1MO120E0080Wickmann / Littelfuse |
SICFET N-CH 1200V 39A TO247-3 |
|
VS-FA72SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 72A SOT-227 |
|
FCP260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A TO220-3 |
|
SIHP6N40D-E3Vishay / Siliconix |
MOSFET N-CH 400V 6A TO220AB |
|
FQPF9N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 8.8A TO220F |
|
PMPB08R5XNXNexperia |
PMPB08R5XN/SOT1220-2/DFN2020M- |
|
NVMFS5C468NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
PMN27XPE115Rochester Electronics |
SMALL SIGNAL FET |
|
SISHA04DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.9A/40A PPAK |
|
FQP12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11.5A TO220-3 |